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| SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors 2SC2582 DESCRIPTION *With TO-126 package *Large collector power dissipation *High transition frequency APPLICATIONS *Audio frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55 +150 Open collector CONDITIONS VALUE 45 35 5 1 1.5 1.2 W UNIT V V V A A SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC2582 SYMBOL MAX UNIT V(BR)CEO V(BR)CBO VCEsat ICEO ICBO IEBO hFE-1 hFE-2 COB fT Collector-emitter breakdown voltage IC=2mA ;IB=0 IC=1mA ;IE=0 IC=500mA ;IB=50mA VCE=20V; IB=0 VCB=20V; IE=0 VEB=5V; IC=0 IC=500mA ; VCE=10V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz IC=50mA ; VCE=10V 35 V Collector-base breakdown voltage 45 V Collector-emitter saturation voltage 0.5 V Collector cut-off current 100 A Collector cut-off current 0.1 A Emitter cut-off current 10 A DC current gain 85 340 DC current gain 50 Output capacitance 20 pF Transition frequency 200 MHz hFE-1 Classifications Q 85-170 R 120-240 S 170-340 2 SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2582 Fig.2 Outline dimensions 3 |
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